View IRFB4310_5115917.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

benefits worldwide best r ds(on) in to-220 improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche soa enhanced body diode dv/dt and di/dt capability d 2 pak irfs4310 to-220ab IRFB4310 to-262 irfsl4310 hexfet power mosfet applications high efficiency synchronous rectification in smps uninterruptible power supply high speed power switching hard switched and high frequency circuits s d g s d g s d g s d g v dss 100v r ds(on) typ. 5.6m max. 7.0m i d 140a absolute maximum ratings symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v dv/dt peak diode recovery v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw avalanche characteristics e as (thermally limited) single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj thermal resistance symbol parameter typ. max. units r jc junction-to-case ??? 0.45 r cs case-to-sink, flat greased surface , to-220 0.50 ??? c/w r ja junction-to-ambient, to-220 ??? 62 r ja junction-to-ambient (pcb mount) , d 2 pak ??? 40 980 see fig. 14, 15, 22a, 22b, 330 14 -55 to + 175 20 2.2 10lb in (1.1n m) 300 max. 140 97 550
www.freescale.net.cn 1 / 11
calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.35mh r g = 25 ? , i as = 75a, v gs =10v. part not recommended for use above this value. i sd 75a, di/dt 550a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. s d g c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . when mounted on 1" square pcb (fr-4 or g-10 material). for recom mended footprint and soldering techniques refer to application note #an-994.
static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.064 ??? v/c r ds(on) static drain-to-source on-resistance ??? 5.6 7.0 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 r g gate input resistance ??? 1.4 ??? ? f = 1mhz, open drain dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 160 ??? ??? s q g total gate charge ??? 170 250 nc q gs gate-to-source charge ??? 46 ??? q gd gate-to-drain ("miller") charge ??? 62 ??? t d(on) turn-on delay time ??? 26 ??? ns t r rise time ??? 110 ??? t d(off) turn-off delay time ??? 68 ??? t f fall time ??? 78 ??? c iss input capacitance ??? 7670 ??? pf c oss output capacitance ??? 540 ??? c rss reverse transfer capacitance ??? 280 ??? c oss eff. (er) effective output capacitance (energy related) ??? 650 ??? c oss eff. (tr) effective output capacitance (time related) ??? 720.1 ??? diode characteristics symbol parameter min. typ. max. units i s continuous source current ??? ??? 140 a (body diode) i sm pulsed source current ??? ??? 550 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 45 68 ns t j = 25c v r = 85v, ??? 55 83 t j = 125c i f = 75a q rr reverse recovery charge ??? 82 120 nc t j = 25c di/dt = 100a/s ??? 120 180 t j = 125c i rrm reverse recovery current ??? 3.3 ??? a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) i d = 75a r g = 2.6 ? v gs = 10v v dd = 65v t j = 25c, i s = 75a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 75a v ds = v gs , i d = 250a v ds = 100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c mosfet symbol showing the v ds = 80v conditions v gs = 10v v gs = 0v v ds = 50v ? = 1.0mhz v gs = 0v, v ds = 0v to 80v , see fig.11 v gs = 0v, v ds = 0v to 80v , see fig. 5 conditions v ds = 50v, i d = 75a i d = 75a v gs = 20v v gs = -20v
www.freescale.net.cn 2 / 11
fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 50v 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 75a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 200 240 280 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 75a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v
www.freescale.net.cn 3 / 11
fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 100 105 110 115 120 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e 0 20 40 60 80 100 120 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 400 800 1200 1600 2000 2400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 12a 17a bottom 75a 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc
www.freescale.net.cn 4 / 11
1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature ri (c/w) i (sec) 0.1962 0.00117 0.2542 0.016569 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci= i / ri ci= i / ri notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long as neither t jmax nor iav (max) is exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 75a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
www.freescale.net.cn 5 / 11

fig 16. threshold voltage vs. temperature

-75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 20 i r r m - ( a ) i f = 30a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 100 200 300 400 500 q r r - ( n c ) i f = 30a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 100 200 300 400 500 q r r - ( n c ) i f = 45a v r = 85v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 4 8 12 16 20 i r r m - ( a ) i f = 45a v r = 85v t j = 125c t j = 25c
www.freescale.net.cn 6 / 11
fig 23a. switching time test circuit fig 23b. switching time waveforms v gs v ds 9 0% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 21. !
for n-channel hexfet power mosfets 1k vc c dut 0 l

?

?
?

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period " " + - + + + - - - ? ?
!
"#"" ? $
%% ? "#""&#

www.freescale.net.cn 7 / 11
to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) lot code assembly dat e code week 19 year 7 = 1997 part number a = assembly site code or product (optional) p = de s i gn at e s l e ad- f r e e e xample: t his is an irl3103l lot code 1789 assembly part number lot code as s embled on ww 19, 1997 in the assembly line "c"
www.freescale.net.cn 9 / 11

!
3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
www.freescale.net.cn 11 / 11

▲Up To Search▲

Price & Availability of IRFB4310

	To Download IRFB4310 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .